A novel double-recessed 0.2-μm T-gate process for heterostructure InGaP-InGaAs doped-channel FET fabrication

IEEE Electron Device Letters

Volumn 24, Issue 6, 2003, Pages 381-383

  Hwu, Ming Jyh ^a   Chiu, Hsien Chin ^a   Yang, Shih Cheng ^a   Chan, Yi Jen ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Doped channel FETs; Double recess; Microwave power

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRON BEAM LITHOGRAPHY; HETEROJUNCTIONS; LEAKAGE CURRENTS; MICROWAVES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

GATE-LEAKAGE CURRENT;

FIELD EFFECT TRANSISTORS;

EID: 0042091996     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.813352     Document Type: Article

References (6)

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