A 1-V 2GHz VLSI CMOS low noise amplifier

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2003, Pages 123-126

  Taris, Thierry ^a   Begueret, Jean Baptiste ^a   Lapuyade, Hervé ^a   Deval, Yann ^a  

^a UNIVERSITÉ DE BORDEAUX   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FEEDBACK; LOGIC DESIGN; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL NOISE; VLSI CIRCUITS;

LOW NOISE AMPLIFIERS (LNA);

CMOS INTEGRATED CIRCUITS;

EID: 0042090354     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. K. Runge and R. Schiffer, "On-chip matched 5.2 and 5.8 GHz differential LNAs fabricated using 0.35 μm CMOS technology", Electronic Letters, vol. 35, n°22, december 1999, pp 1899-1900
2. A. N. Karanicolas, "A 2.7V 900MHz CMOS LNA and Mixer", IEEE Journal of Solid-State Circuits, vol. 31, n°12, 1996, pp. 1939-1944.
3. A. Ajjikuttira and H. Nakaramura, "A fully integrated CMOS RFIC for bluetooth applications", Proceeding of the Int. Solid-State Circ. Conf. (ISSCC'2001), San Francisco, USA, pp 198-200, Feb. 2001.
4. D. K. Shaeffer and T. H. Lee, "A 1.5V, l.5GHz CMOS Low Noise Amplifier", IEEE Journal of Solid-State Circuits, vol 32, n°5, 1997, pp 745-759.
5. D. Manstretta; R. Castello; F. Gatta; P. Rossi; F. Svelto, "A 0.18μm CMOS direct-conversion receiver front-end for UMTS", ", Proceeding of the Int. Solid-State Circ. Conf. (ISSCC'2002), San Francisco, USA, Vol. 2, pp. 192-193.
6. J.T. Calvin and K. Kenneth, "Effect of substrate resistances on LNA performance and a Bondpad structure for reducing the effect in a Silicon Bipolar Technology", IEEE Journal of Solid-State Circuits, vol 34, n°9, 1999, pp 1339-1344.
7. J. Jussila, "A 22 mW 3.7 dB NF direct conversion receiver for 3 G WCDMA" Proceeding of the Int. Solid-State Circ. Conf. (ISSCC'2001), San Francisco, USA, pp 198-200, Feb. 2001.