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Volumn 67, Issue 24, 2003, Pages

Role of finite layer thickness in spin polarization of GaAs two-dimensional electrons in strong parallel magnetic fields

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE;

EID: 0042028388     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.241309     Document Type: Article
Times cited : (72)

References (19)
  • 11
    • 85039008865 scopus 로고    scopus 로고
    • cond-mat/0206519 (unpublished)
    • Hwayong Noh et al., cond-mat/0206519 (unpublished).
    • Noh, H.1
  • 14
    • 0033707970 scopus 로고    scopus 로고
    • The role of finite layer thickness in determining the B, -dependence of the magnetoresistance of 2D carrier systems was recently reported
    • ∥-dependence of the magnetoresistance of 2D carrier systems was recently reported [S. Das Sarma and E.H. Hwang, Phys. Rev. Lett. 84, 5596 (2000)].
    • (2000) Phys. Rev. Lett. , vol.84 , pp. 5596
    • Das Sarma, S.1    Hwang, E.H.2
  • 15
    • 85039003544 scopus 로고    scopus 로고
    • *
    • *.
  • 18
    • 85039016806 scopus 로고    scopus 로고
    • P decreases less quickly when a back-gate (sample B3), rather than a front-gate (samples A and B1), is used to decrease n. This is consistent with the finite layer thickness effect. When we use a front-gate to reduce the density, the wave function gets thicker while the opposite is true when the back-gate is used
    • P decreases less quickly when a back-gate (sample B3), rather than a front-gate (samples A and B1), is used to decrease n. This is consistent with the finite layer thickness effect. When we use a front-gate to reduce the density, the wave function gets thicker while the opposite is true when the back-gate is used.
  • 19
    • 0037422975 scopus 로고    scopus 로고
    • Also see J. Zhu et al., Phys. Rev. Lett. 90, 056805 (2003).
    • (2003) Phys. Rev. Lett. , vol.90 , pp. 056805
    • Zhu, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.