New nano-scale transistor using metal/insulator/metal tunnel junction

Annual Device Research Conference Digest

Volumn , Issue , 1998, Pages 44-45

  Fujimaru, Kouji ^a   Sasajima, Ryouta ^a   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRODES; GATES (TRANSISTOR); INSULATING MATERIALS; LEAKAGE CURRENTS; MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TITANIUM; TUNNEL JUNCTIONS;

METAL INSULATOR METAL TUNNEL JUNCTION; METAL INSULATOR TUNNEL TRANSISTOR; NANO SCALE TRANSISTOR; SOURCE DRAIN CURRENT;

TRANSISTORS;

EID: 0032306119     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)