Regrowth of heavy-ion implantation damage by electron beams

Materials Science in Semiconductor Processing

Volumn 3, Issue 4, 2000, Pages 311-315

  Jencic I ^a   Robertson, I M ^b  

^a JO EF STEFAN INSTITUTE   (Slovenia)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL DEFECTS; ELECTRON BEAMS; ELECTRON IRRADIATION; EPITAXIAL GROWTH; HEAVY IONS; RECRYSTALLIZATION (METALLURGY); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

SOLID-PHASE EPITAXY;

ION IMPLANTATION;

EID: 0042875227     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00049-4     Document Type: Article

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