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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 197-201

Electron-induced regrowth of isolated amorphous zones in GaAs

(3) Jencic I a Hollar, E P b Robertson, I M b

a JO EF STEFAN INSTITUTE (Slovenia)

b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN (United States)

Author keywords

Crystallization; Gallium arsenide; Sub threshold electrons

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRON IRRADIATION; ION IMPLANTATION; SEMICONDUCTOR GROWTH; XENON;

ELECTRON INDUCED REGROWTH;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035303278 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(01)00339-1 Document Type: Conference Paper

Times cited : (8)

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