Universal behaviour of metal-insulator transitions in the p-SiGe system

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 6, Issue 1, 2000, Pages 268-271

  Coleridge, P T ^a   Zawadzki, P ^a   Sachrajda, A S ^a   Williams, R L ^a   Feng, Y ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FERROMAGNETISM; HALL EFFECT; METAL INSULATOR BOUNDARIES; PHASE DIAGRAMS; SEMICONDUCTING SILICON COMPOUNDS; SHUBNIKOV-DE HAAS EFFECT; STRAIN; THERMAL EFFECTS;

INTEGER QUANTUM HALL EFFECT (IQHE); METAL-INSULATOR TRANSITIONS (MIT); SILICON GERMANIDE; ZEEMAN EFFECT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034138855     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00142-3     Document Type: Article

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