Scaling behavior of metal-insulator transitions in a Si/SiGe two dimensional hole gas

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 12, Issue 1-4, 2002, Pages 600-603

  Possanzini, C ^a   Ponomarenko, L ^b   De Lang, D ^b   De Visser, A ^b   Olsthoorn, S M ^a   Fletcher, R ^c   Feng, Y ^d   Coleridge, P T ^d   Williams, R L ^d   Maan, J C ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b UNIVERSITY OF AMSTERDAM   (Netherlands)

^c QUEEN S UNIVERSITY   (Canada)

^d NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Metal insulator transition; Scaling; SiGe

Indexed keywords

HALL EFFECT; HETEROJUNCTIONS; MAGNETIC FIELD EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

HALL CONDUCTIVITY;

METAL INSULATOR TRANSITION;

EID: 0035239456     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(01)00388-5     Document Type: Conference Paper

References (12)