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Volumn 21, Issue 4, 2003, Pages 1298-1301

Electronic structure of SixSn(1-x)/Si(111)-(√3 × √3) R30° phases

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ELECTRONIC STRUCTURE; LOW ENERGY ELECTRON DIFFRACTION; PHOTOEMISSION; SEMICONDUCTING SILICON COMPOUNDS; SILICON COMPOUNDS; SURFACE PROPERTIES; TEMPERATURE; TIN; ULTRAHIGH VACUUM;

EID: 0041733722     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1562180     Document Type: Article
Times cited : (2)

References (28)
  • 24
    • 0042070613 scopus 로고    scopus 로고
    • (to be published)
    • J. Lobo et al. (to be published).
    • Lobo, J.1
  • 28
    • 0041569271 scopus 로고    scopus 로고
    • note
    • [Note that the relative intensities of the two components in the Sn 4d core level are interchanged in Sn/Si(111) with respect to Sn/Ge(111) (Ref. 18).]


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.