An improved velocity overshoot model for submicron-gate mesfets

Solid-State Electronics

Volumn 39, Issue 10, 1996, Pages 1522-1523

  Schwierz, F ^a   Rosserg M ^a   Nuernbergk, D ^a   Schipanski, D ^a   Forster H ^a   Liou, J J ^b  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC FIELDS; GATES (TRANSISTOR); MESFET DEVICES; MONTE CARLO METHODS; PIECEWISE LINEAR TECHNIQUES; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

CHANNEL DOPING CONCENTRATION; DRAIN CURRENT; GATE LENGTHS; SUBMICRON GATE MESFETS; VELOCITY OVERSHOOT MODEL;

SEMICONDUCTOR DEVICE MODELS;

EID: 0030268847     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00036-6     Document Type: Article

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