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Volumn 1, Issue , 2003, Pages 144-149

Switching loss contributions of synchronous rectifiers in VRM applications

Author keywords

Capacitive current; De embedding; Gate bouncing; Half bridge; MOSFET characterisation; Reverse recovery; Switching behaviour; Synchronous rectification; VRM

Indexed keywords

CAPACITANCE; ELECTRIC BREAKDOWN; ELECTRIC RECTIFIERS; MOSFET DEVICES;

EID: 0041657481     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (13)

References (8)
  • 2
    • 0026140310 scopus 로고
    • An accurate model for power DMOSFET's including interelectrode capacitances
    • April
    • R. Scott, G. Franz, J. Johnson, An Accurate Model for Power DMOSFET's Including Interelectrode Capacitances, IEEE Transactions on Power Electronics, Vol. 6, No 2, April 1991, pp192-8
    • (1991) IEEE Transactions on Power Electronics , vol.6 , Issue.2 , pp. 192-198
    • Scott, R.1    Franz, G.2    Johnson, J.3
  • 3
    • 0034450132 scopus 로고    scopus 로고
    • A unified high accuracy SPICE library for the power semiconductor devices built with the analog behavioral macromodeling technique
    • May 22-25, Toulouse, France
    • A. Maxim, D. Andreu, J. Boucher, A Unified High Accuracy SPICE Library For The Power Semiconductor Devices Built with the Analog Behavioral Macromodeling Technique, ISPSD'2000, May 22-25, Toulouse, France, pp 189-92
    • ISPSD'2000 , pp. 189-192
    • Maxim, A.1    Andreu, D.2    Boucher, J.3
  • 4
    • 0026141845 scopus 로고
    • A simple diode model with reverse recovery
    • April
    • P. Lauritzen, C. Ma, A Simple Diode Model with Reverse Recovery, IEEE Transactions on Power Electronics, Vol. 6, No 2, April 1991, ppl88-91
    • (1991) IEEE Transactions on Power Electronics , vol.6 , Issue.2 , pp. 188-191
    • Lauritzen, P.1    Ma, C.2
  • 6
    • 0033354088 scopus 로고    scopus 로고
    • New characterization technique for oxide degradation in power VDMOSFET based on split C_V measurements
    • S. Mileusnic, P. Habas, M.Zivanov, New characterization technique for oxide degradation In power VDMOSFET based on split C_V measurements, CAS Proceedings '99, pp165-8
    • CAS Proceedings '99 , pp. 165-168
    • Mileusnic, S.1    Habas, P.2    Zivanov, M.3
  • 7
    • 0035744134 scopus 로고    scopus 로고
    • MOS transistors characterization by spilt C-V method
    • S. Mileusnic, M.Zivanov, P. Habas, MOS transistors characterization by spilt C-V method, CAS Proceedings 2001, pp503-6
    • (2001) CAS Proceedings , pp. 503-506
    • Mileusnic, S.1    Zivanov, M.2    Habas, P.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.