New characterization technique for oxide degradation in power VDMOSFET based on split C-V measurements

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 1999, Pages 165-168

  Mileusnic, Sasa ^a   Habas, Predrag ^a   Zivanov, Milos ^a  

^a UNIVERSITY OF NOVI SAD   (Serbia)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; INTERFACES (MATERIALS); SEMICONDUCTOR DEVICE MODELS;

CHARGE-PUMPING METHODS; GATE OXIDE DEGRADATIONS; RADIATION-INDUCED OXIDE DAMAGE;

MOSFET DEVICES;

EID: 0033354088     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (13)