Influence of dots size and dots number fluctuations on the electrical characteristics of multi-nanocrystal memory devices

Solid-State Electronics

Volumn 47, Issue 10, 2003, Pages 1637-1640

  Perniola, L ^a,b   D Salvo, B ^b   Ghibaudo, G ^a   Para, A Foglio ^c   Pananakakis, G ^a   Baron, T ^d   Lombardo, S ^e  

^a IMEP LAHC   (France)

^b CEA LETI   (France)

^c POLITECNICO DI MILANO   (Italy)

^d CNRS   (France)

^e CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MONTE CARLO METHODS; NANOSTRUCTURED MATERIALS; POISSON DISTRIBUTION;

DOT DENSITY; DOT DISTRIBUTION;

DATA STORAGE EQUIPMENT;

EID: 0041592499     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00181-3     Document Type: Conference Paper

References (5)

1. ITRS Roadmap, 2002 edition.
2. x. IEEE Trans. Electron. Dev. 48(4):2001;696.
3. Mazen F., Baron T., Brémond G., Buffet N., Rochat N., Mur P.et al. Influence of chemical properties of the substrate on silicon quantum dot nucleation. J. Electrochem. Soc. 150:2003.
4. De Salvo B., Ghibaudo G., Pananakakis G., Masson P., Baron T., Buffet N.et al. Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices. IEEE Trans. Electron. Dev. 48(8):2001;1789-1798.
5. Feller W. An introduction to probability theory and its applications. Wiley & Sons [Chapter XII].