Anisotropic magnetic centers and conduction electrons in hydrogenated microcrystalline silicon

Materials Science and Engineering: B

Volumn 103, Issue 1, 2003, Pages 37-44

  Morigaki, K ^a,e   Hikita, H ^b   Yamaguchi, M ^c   Fujita, Y ^d  

^a HIROSHIMA INSTITUTE OF TECHNOLOGY   (Japan)

^b MEIKAI UNIVERSITY SCHOOL OF DENTISTRY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d TOKYO METROPOLITAN UNIVERSITY   (Japan)

^e NONE   (Japan)

Author keywords

Defects; Electron paramagnetic resonance; Microcrystalline silicon; Semiconductors

Indexed keywords

CHEMICAL BONDS; CRYSTALLINE MATERIALS; DEFECTS; ELECTRIC CONDUCTANCE; ELECTRONS; HYDROGENATION; MAGNETIC ANISOTROPY; PARAMAGNETIC RESONANCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

MAGNETIC CENTERS;

SILICON;

EID: 0041522828     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(03)00146-6     Document Type: Article

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