A theoretical study of differing active region doping profiles for W-band (75-110 GHz) InP Gunn diodes

Semiconductor Science and Technology

Volumn 18, Issue 8, 2003, Pages 794-802

  Dunn, G M ^a   Kearney, M J ^b  

^a UNIVERSITY OF ABERDEEN   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; FREQUENCIES; MICROWAVES; MONTE CARLO METHODS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

ACTIVE REGION DOPING PROFILES; HIGH POWER MICROWAVE SOURCES; INDIUM PHOSPHIDE GUNN DIODES;

DIODES;

EID: 0041513234     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/8/313     Document Type: Article

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