Gas source molecular beam epitaxial growth of 77 GHz InP Gunn diodes for automotive forward looking radar applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1645-1649

  Franklin, J ^a   Kuo, H C ^a   Liu, J ^a   Vizcarra, R ^a   Pao, Y C ^a   Cheng, K Y ^b   Pickrell, G ^b  

^a Filtronic Solid State   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; COMPOSITION EFFECTS; CRYSTAL DEFECTS; DOPING (ADDITIVES); MOLECULAR BEAM EPITAXY; REACTION KINETICS; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM PHOSPHIDE;

GAS SOURCE MOLECULAR BEAM EPITAXY;

GUNN DIODES;

EID: 0034187308     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591444     Document Type: Article

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