Transmission electron microscopy observation of high-temperature γ-FeSi2 precipitates formed in Si by iron implantation using a metal vapor vacuum arc ion source

Applied Physics Letters

Volumn 83, Issue 4, 2003, Pages 638-640

  Gao, Y ^a   Wong, S P ^a   Cheung, W Y ^a   Shao, G ^b   Homewood, K P ^b  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ION IMPLANTATION; ION SOURCES; PRECIPITATION (CHEMICAL); SILICON; TRANSMISSION ELECTRON MICROSCOPY;

PHASE FORMATION;

IRON COMPOUNDS;

EID: 0041430998     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1594832     Document Type: Article

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