Characterization and light emission properties of β-FeSi2 precipitates in Si synthesized by metal vapor vacuum arc ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 206, Issue , 2003, Pages 317-320

  Gao, Y ^a   Wong, S P ^a   Cheung, W Y ^a   Shao, G ^b   Homewood, K P ^b  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Dislocation loops; Ion implantation; Iron disilicides; Photoluminescence; Transmission electron microscopy

Indexed keywords

CRYSTAL DEFECTS; IRON COMPOUNDS; LIGHT EMISSION; PHOTOLUMINESCENCE; PRECIPITATION (CHEMICAL); SILICON; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION LOOPS;

ION IMPLANTATION;

EID: 0038823536     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00753-5     Document Type: Conference Paper

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