New silicon-on-insulator (SOI) flash memory with side channel and side floating gate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 6 A, 2003, Pages 3361-3363

  Choi, Hoon ^a   Tanabe, Tadao ^a   Kotaki, Noriyuki ^a   Koh, Kwang Wook ^a   Shim, Jeoung Chill ^a   Park, Ki Tae ^a   Kurino, Hiroyuki ^a   Koyanagi, Mitsumasa ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Atomic layer doping (ALD) method; Flash memory; Fowler Nordheim (FN) tunneling; Side channel; Silicon on insulator (SOI)

Indexed keywords

ELECTRON TUNNELING; FLASH MEMORY; GATES (TRANSISTOR); SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

ATOMIC LAYER DOPING; FOWLER NORHEIM TUNNELING; SIDE CHANNEL; ULTRA SHALLOW JUNCTION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0041379818     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.3361     Document Type: Article

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