Pure green light-emitting diodes based on high quality ZnTe substrates and a thermal diffusion process

IEICE Transactions on Electronics

Volumn E83-C, Issue 4, 2000, Pages 579-583

  Sato, Kenji ^a   Hanafusa, Mikio ^a   Noda, Akira ^a   Arakawa, Atsutoshi ^a   Asahi, Toshiaki ^a   Uchida, Masayuki ^a   Oda, Osamu ^a  

^a JAPAN ENERGY CORPORATION   (Japan)

Author keywords

Green led; Thermal diffusion; VGF; Znte

Indexed keywords

ACTIVATION ENERGY; ALUMINUM; ANNEALING; DEPOSITION; DISLOCATIONS (CRYSTALS); ELECTROLUMINESCENCE; HETEROJUNCTIONS; LOW TEMPERATURE OPERATIONS; POINT DEFECTS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL DIFFUSION;

GREEN LIGHT EMITTING DIODES; LOW TEMPERATURE ANNEALING; VERTICAL GRADIENT FREEZING;

LIGHT EMITTING DIODES;

EID: 0033723185     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

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