Behavior of Si photoelectrodes under high level injection conditions. 3. Transient and steady-state measurements of the quasi-Fermi levels at Si/CH3OH contacts

Journal of Physical Chemistry B

Volumn 101, Issue 15, 1997, Pages 2850-2860

  Kenyon, C N ^a   Tan, Ming X ^a   Krüger, Olaf ^a   Lewis, Nathan S ^a  

^a California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039732490     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp962485c     Document Type: Article

References (31)

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31. 2.