Photoluminescence characterization of Te-doped GaSb layers grown by liquid-phase epitaxy from Bi melts

Semiconductor Science and Technology

Volumn 12, Issue 11, 1997, Pages 1409-1415

  Gladkov, P ^a   Monova, E ^b   Weber, J ^c  

^a INSTITUTE OF MATHEMATICS   (Czech Republic)

^b UNIVERSITY OF SOFIA   (Bulgaria)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039555654     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/11/013     Document Type: Article

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