Hydrogen-oxygen-vacancy complexes in Czochralski-grown silicon crystal

Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 4945-4951

  Hatakeyama, H ^a   Suezawa, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CZOCHRALSKI; FIRST ORDER REACTIONS; GENERATION PROCESS; HYDROGEN ATMOSPHERE; ISOCHRONAL ANNEALING; META-STABLE STATE; MEV-ELECTRONS; MIGRATION ENERGY; NEUTRAL-CHARGE; OPTICAL ABSORPTION; OPTICAL THRESHOLD; OXYGEN-VACANCY COMPLEXES; SHALLOW DONORS; SILICON CRYSTAL; STABLE STATE; VACANCY-OXYGEN PAIR;

ANNEALING; ELECTRON IRRADIATION; EXCITED STATES; HYDROGEN; OXYGEN;

ACTIVATION ENERGY;

EID: 0001711228     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366361     Document Type: Article

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