A new kind of fast quantum-well semiconductor saturable-absorber mirror with low losses for ps pulse generation

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2003, Pages 247-250

  Garnache, A ^a   Sermage, B ^a   Teissier, R ^b   Saint Girons, G ^a   Sagnes, I ^a  

^a CNRS   (France)

^b UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

LASER MODE LOCKING; LASER PULSES; LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; TELECOMMUNICATION; CARRIER LIFETIME; CHARGE CARRIERS; COSTS; DISPERSIONS; GROUP DELAY; INDIUM; INDIUM PHOSPHIDE; LASER MIRRORS; LASER MODES; MANUFACTURE; MIRRORS; PULSE GENERATORS; QUANTUM WELL LASERS; SATURABLE ABSORBERS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR LASERS; SEMICONDUCTOR SATURABLE ABSORBER MIRRORS; ULTRASHORT PULSES;

BRAGG MIRROR; GROUP DELAY DISPERSION; OPTICAL REGENERATION DEVICES; SEMICONDUCTOR SATURABLE ABSORBER MIRROR;

MIRRORS; SEMICONDUCTOR QUANTUM WELLS;

ALL OPTICAL REGENERATION; GROUP DELAY DISPERSION; PASSIVELY MODE-LOCKED LASERS; PULSE GENERATION; RADIATIVE RECOMBINATION; STANDARD CONDITIONS; SURFACE RECOMBINATIONS; TELECOM APPLICATIONS;

EID: 0038825212     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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