Wafer-scale integration of GaAs optoelectronic devices with standard Si integrated circuits using a low-temperature bonding procedure

Applied Physics Letters

Volumn 81, Issue 27, 2002, Pages 5099-5101

  Georgakilas, A ^a   Deligeorgis, G ^a   Aperathitis, E ^a   Cengher, D ^a   Hatzopoulos, Z ^a   Alexe, M ^b   Dragoi, V ^b   Gosele U ^b   Kyriakis Bitzaros, E D ^c   Minoglou, K ^c   Halkias, G ^c  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; EPITAXIAL GROWTH; LOW TEMPERATURE OPERATIONS; OPTICAL LINKS; PHOTODIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SILICON WAFERS; WSI CIRCUITS;

LOW TEMPERATURE WAFER BONDING;

OPTOELECTRONIC DEVICES;

EID: 0038767993     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1531221     Document Type: Article

References (7)

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