Dynamic avalanche in Si power diodes and impact ionization at the nn+ junction

Solid-State Electronics

Volumn 44, Issue 3, 2000, Pages 477-485

  Domeij, Martin ^a   Breitholtz, Bo ^a,b   Lutz, Josef ^c   Östling, Mikael ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ABB CORPORATE RESEARCH   (Sweden)

^c Semikron Elektronik GmbH AndCo KG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENT DISTRIBUTION; IMPACT IONIZATION; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

DYNAMIC AVALANCHE; INSULATED GATE BIPOLAR TRANSISTORS; OPTICAL TECHNIQUE; REVERSE RECOVERY FAILURE; SILICON POWER DIODES;

AVALANCHE DIODES;

EID: 0034159384     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00261-0     Document Type: Article

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