Field-induced effects of implanted Ga on high electric field diamond devices fabricated by focused ion beam

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 65-71

  Hamada, Mitsuhiro ^a   Teraji, Tokuyuki ^a   Ito, Toshimichi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Diamond thin film; Focused ion beam; Gallium implantation; High electric field; Microstructure

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIAMONDS; ELECTRIC FIELDS; ION BEAMS; MICROSTRUCTURE;

FOCUSED ION BEAMS (FIB);

GALLIUM;

EID: 0038684538     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00511-7     Document Type: Conference Paper

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