Process-induced modification to the surface of crystalline GaAs measured by photometry

Applied Surface Science

Volumn 143, Issue 1, 1999, Pages 223-228

  Briantseva, T A ^a   Lebedeva, Z M ^a   Markov, I A ^a   Bullough, T J ^b   Lioubtchenko, D V ^b  

^a INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; CHEMICAL ANALYSIS; CREEP; CRYSTALLINE MATERIALS; DIFFUSION; ENERGY ABSORPTION; GALLIUM; MICROWAVE HEATING; PHOTOMETRY; SURFACE TREATMENT; SURFACES;

PROCESS INDUCED MODIFICATION; SEMICONDUCTOR TECHNOLOGY; THERMAL ANNEALING; ULTRASONIC VIBRATIONS;

GALLIUM COMPOUNDS;

EID: 0032653465     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00893-9     Document Type: Article

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