Ga migration process in Au film on (100) GaAs under temperature treatment in vacuum

Applied Surface Science

Volumn 100-101, Issue , 1996, Pages 169-173

  Bryantseva, T A ^a   Lioubtchenko, D V ^a   Lopatin, V V ^a  

^a INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ANALYSIS; CHEMICAL REACTIONS; EUTECTICS; GALLIUM; GOLD; HEAT TREATMENT; METALLIC FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SILICA; SUBSTRATES; THIN FILMS; VACUUM;

MIGRATION; TEMPERATURE TREATMENT; THIN METAL FILM;

SURFACE STRUCTURE;

EID: 0030564541     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00280-2     Document Type: Article

References (7)

1. C. Ram, P. Gupta, W.S. Knokle and J. Wuerfi, Thin Solid Film 151 (1987) 121.
2. T.A. Bryantseva, Z.M. Lebedeva, V.V. Lopatin and V.E. Lioubchenko, Zavod. Lab. 57 (1991) 21.
3. T.A. Bryantseva, G.G. Dvoryankina, V.Y. Vinnichenko and E.O. Yunevich, Dokl. Akad. Nauk 300 (1988) 601.
4. S.P. Yatsenko, Gallii. Vzaimodeistvie s Metallami (Nauka, Moscow, 1974).
5. D.C. Miller, J. Electrochem. Soc. 127 (1980) 467.
6. M.V. Panish, J. Electrochem. Soc. 5 (1967) 114.
7. I. Kaur and W. Gust, Fundamentals of Grain and Interphase Boundary Diffusion, 2nd ed. (Stuttgart, 1989).