A comparison of endpoint methods in advanced photomask etch applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4889, Issue 1, 2002, Pages 40-49

  Johnson, Dave ^a   Plumhoff, Jason ^a   Shin, Jong ^a   Rausa, Emmanuel ^a  

^a Unaxis USA Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; LIGHT REFLECTION; SIGNAL TO NOISE RATIO; SPECTROMETERS; SPECTROSCOPIC ANALYSIS; STATISTICAL METHODS;

OPTICAL EMISSION SPECTROSCOPY (OES);

MASKS;

EID: 0038643059     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.467749     Document Type: Conference Paper

References (5)

1. R. Anderson, et al., "In situ optical emission spectroscopic examination of chrome etch for photomasks", Proc. SPIE 4754 pp. 312-322, 2002.
2. M. Buie, et al., "Endpoint solution for photomask Cr loads down to 0.25%", Proc. SPIE 4562 pp. 616-623, 2001.
3. D.-S. Min, et al., "Application of multiple wavelength absorption endpoint system in photomask dry etcher," Proc. SPIE 4754 pp. 341-349, 2002.
4. S. Smith, The Scientist and Engineer's Guide to Digital Signal Processing, California Technical Publishing, San Diego, 1997.
5. T. Faure, et al., "Utilization of optical emission in photomask dry etch processing", Proc. SPIE 4562 pp. 68-78, 2002.