Utilization of optical emission endpoint in photomask dry etch processing

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4562 I, Issue , 2001, Pages 68-78

  Faure, Thomas ^a   Huynh, Cuc ^a   Lercel, Michael ^a   Smith, Adam ^a   Wagner, Thomas ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

Dry etching; Endpoint detection; Optical emission spectroscopy; Photomask; Reactive ion etching

Indexed keywords

DRY ETCHING; EMISSION SPECTROSCOPY; LASER APPLICATIONS; LIGHT EMISSION; MICROELECTROMECHANICAL DEVICES; REACTIVE ION ETCHING;

PHOTOMASK DRY ETCH PROCESSING;

MASKS;

EID: 0035763858     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.458343     Document Type: Article

References (3)

1. C. Constantine, D. Johnson, R.J. Westerman, T. Coleman, and T. Faure, "Plasma Etching of Cr Photomasks: Optimization of Process Conditions and CD Control," Proc. SPIE 3236 pp.94-103, 1997.
2. G. Harrison, MIT Wavelength Tables, (M.I.T. Press, Cambridge) 1963.
3. H. Yue, S. Qin, J. Wiseman, and A. Toprac, "Plasma Etching Endpoint Detection Using Multiple Wavelengths for Small Open-Area Wafers," J. Vac. Sci. Technol. A19, 66, 2001.