High-efficiency AlGaInP/AlGaAs vertical-cavity surface-emitting lasers with 650 nm wavelength

IEE Proceedings: Optoelectronics

Volumn 150, Issue 2, 2003, Pages 110-114

  Knigge, A ^a   Zorn, M ^a   Sebastian, J ^a   Vogel, K ^a   Wenzel, H ^a   Weyers, M ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTROLUMINESCENCE; ENERGY GAP; HETEROJUNCTIONS; INTERFACES (MATERIALS); LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

ALUMINUM GALLIUM ARSENIDE; ALUMINUM GALLIUM INDIUM PHOSPHIDE; DISTRIBUTED BRAGG REFLECTOR; LOW PRESSURE METALLORGANIC VAPOUR PHASE EPITAXY; THRESHOLD CURRENT DENSITY; VERTICAL CAVITY SURFACE EMITTING LASER;

QUANTUM WELL LASERS;

EID: 0038607059     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20030372     Document Type: Article

References (11)

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