Si(1 1 1) step fluctuations in reflection electron microscopy at 1100 °C: Anomalous step-step repulsion

Applied Surface Science

Volumn 212-213, Issue SPEC., 2003, Pages 219-223

  Schroll, Robert D ^a   Cohen, Saul D ^a,c   Einstein, T L ^a   Metois J J ^b   Gebremariam, Hailu ^a   Richards, Howard L ^a,d   Williams, Ellen D ^a  

^a University of Maryland   (United States)

^b CAMPUS DE LUMINY   (France)

^c Department of Earth and Environmental Sciences   (United States)

^d TEXAS A AND M UNIVERSITY   (United States)

Author keywords

Equilibrium thermodynamics and statistical mechanics; Evaporation; Models of surface kinetics; Reflection electron microscopy; Semiconducting surfaces; Silicon; Sublimation; Vicinal single crystal surfaces

Indexed keywords

ELECTRON MICROSCOPY; EVAPORATION; SILICON; STATISTICAL METHODS; SUBLIMATION; SURFACE REACTIONS;

SEMICONDUCTING SURFACES;

SINGLE CRYSTALS;

EID: 0038580424     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00409-4     Document Type: Conference Paper

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