130-mm2, 256-Mbit NAND flash with shallow trench isolation technology

IEEE Journal of Solid-State Circuits

Volumn 34, Issue 11, 1999, Pages 1536-1543

  Imamiya, Kenichi ^a   Sugiura, Yoshihisa ^a   Nakamura, Hiroshi ^a   Himeno, Toshihiko ^a   Takeuchi, Ken ^a   Ikehashi, Tamio ^a   Kanda, Kazushige ^a   Hosono, Koji ^a   Shirota, Riichiro ^a   Aritome, Seiichi ^a   Shimizu, Kazuhiro ^a   Hatakeyama, Kazuo ^a   Sakui, Koji ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC POWER SUPPLIES TO APPARATUS; NAND CIRCUITS; POWER CONVERTERS; SEMICONDUCTOR DEVICE MANUFACTURE; SENSORS; TRANSISTORS;

FLASH MEMORY; SHALLOW TRENCH ISOLATION (STI) TECHNOLOGY; VOLTAGE DOWN CONVERTERS;

DATA STORAGE EQUIPMENT;

EID: 0033222055     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.799860     Document Type: Article

References (9)

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