Investigation of the shape of InGaAs/GaAs quantum dots

Materials Research Society Symposium - Proceedings

Volumn 737, Issue , 2003, Pages 179-184

  Lehman, Susan Y ^a   Roshko, Alexana ^a   Mirin, Richard P ^a   Bonevich, John E ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DENSITY (OPTICAL); MOLECULAR BEAM EPITAXY; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES;

CAPPING; FACETING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0038488180     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. K. Zhang, C. Heyn, W. Hansen et al., Appl. Phys. Lett. 76, 2229 (2000).
2. K. Zhang, J. Falta, T. Schmidt et al., Pure Appl. Chem. 72, 199 (2000).
3. M. Grundmann, N. N. Ledentsov, R. Heitz et al., Phys. Status Solidi B 188, 249 (1995).
4. D. M. Bruls, J. W. A. M. Vugs, P. M. Koenraad et al., Appl. Phys. Lett. 81, 1708 (2002).
5. T. Kaizu and K. Yamaguchi, Jpn. J. Appl. Phys. Part 1 40, 1885 (2001).
6. H. Lee, W. D. Yang, P. C. Sercel et al., J. Electron. Mater. 28, 481 (1999).
7. H. Lee, R. Lowe-Webb, W. D. Yang et al., Appl. Phys. Lett. 72, 812 (1998).
8. H. Saito, K. Nishi, and S. Sugou, Appl. Phys. Lett. 74, 1224 (1999).
9. S. Anders, C. S. Kim, B. Klein et al., Phys. Rev. B 66, 125309 (2002).
10. R. M. Tromp, F. M. Ross, and M. C. Reuter, Phys. Rev. Lett. 84, 4641 (2000).