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Volumn 188, Issue 2, 2001, Pages 775-778

Indium Surfactant Assisted Growth of AlN/GaN Heterostructures by Metal-Organic Chemical Vapor Deposition

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Indexed keywords


EID: 0038465156     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200112)188:2<775::AID-PSSA775>3.0.CO;2-S     Document Type: Article
Times cited : (13)

References (16)
  • 1
    • 1842724523 scopus 로고    scopus 로고
    • Group III-nitride semiconductor electronics
    • IEEE Trans. Electron Devices 48, No. 3 (2000), Special issue on group III-nitride semiconductor electronics.
    • (2000) IEEE Trans. Electron Devices , vol.48 , Issue.3 SPEC. ISSUE


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.