Nitrogen gas-cluster ion beam - A new nitrogen source for GaN growth

Materials Research Society Symposium - Proceedings

Volumn 743, Issue , 2002, Pages 97-102

  Shao, Y ^a   Chen, T C ^b   Fenner, D B ^a   Moustakas, T D ^b   Chu, George ^c  

^a Epion Corporation   (United States)

^b Boston University   (United States)

^c AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; LOW TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; MOLECULES; NITROGEN; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

NITRIDATION; NITROGEN GAS-CLUSTER ION BEAM;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0038455573     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-743-l3.10     Document Type: Conference Paper

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