Ammonia cluster beam for group-III nitride synthesis

Physica Status Solidi (A) Applied Research

Volumn 180, Issue 1, 2000, Pages 251-256

  Saito, H ^a   Kato, T ^a   Yoneta, M ^a   Ohishi, M ^a   Matsuo, J ^b   Yamada, I ^b  

^a OKAYAMA UNIVERSITY OF SCIENCE   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ETCHING; ION BEAMS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; SYNTHESIS (CHEMICAL); THERMAL EFFECTS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

CLUSTER BEAM; NITRIDATION;

NITRIDES;

EID: 0034229284     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200007)180:1<251::AID-PSSA251>3.0.CO;2-6     Document Type: Article

References (6)

1. K. ONABE et al. (Eds.), Proc. of the 2nd Internat. Symp. on Blue Laser and Light Emitting Diodes, Ohmsha Ltd., Tokyo 1998; J. Crystal Growth 184/185, (1998).
2. K. ONABE et al. (Eds.), Proc. of the 2nd Internat. Symp. on Blue Laser and Light Emitting Diodes, Ohmsha Ltd., Tokyo 1998; J. Crystal Growth 184/185, (1998).
3. I. YAMADA, in: Application of Acceleration in Research and Industry, Eds. J.L. DUGGAN and I.L. MORGAN, AIP Press, New York 1997 (p. 479).
4. I. YAMADA and J. MATUO, Mater. Sci. in Semicond. Processing 1, 27 (1998).
5. H. SAITO, in: Application of Acceleration in Research and Industry, Eds. J.L. DUGGAN and I.L. MORGAN, AIP Press, New York 1998 (p. 417).
6. E. MIYAZAKI et al., Fundamentals and Applications of Surface Science, Fuji Technosystem Co. Ltd., Tokyo 1991 (Chap. 10, p. 284, in Japanese).