Damage production in GaAs during MeV ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 120, Issue 1-4, 1996, Pages 230-235

  Herre, O ^a   Wendler, E ^a   Achtziger, N ^a   Licht, T ^a   Reislohner U ^a   Rub M ^a   Bachmann, T ^a   Wesch, W ^a   Gaiduk, P I ^b   Komarov, F F ^b  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b BELARUSIAN STATE UNIVERSITY   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ION BOMBARDMENT; ION IMPLANTATION; MICROSCOPIC EXAMINATION; POINT DEFECTS; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

ION BEAM DAMAGE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030566543     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00515-0     Document Type: Article

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