Compliant epitaxial growth of InxGa1-xAs and InxAl1-xAs on In0.25Ga0.75As pseudosubstrates

Journal of Applied Physics

Volumn 93, Issue 9, 2003, Pages 5429-5434

  Pickrell, G W ^a,b   Xu, C F ^a   Chang, K L ^a   Hsieh, K C ^a   Cheng, K Y ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b OptiComp Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DISLOCATIONS (CRYSTALS); FILM GROWTH; HALL EFFECT; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

PSEUDOSUBSTRATES;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0038324310     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1565692     Document Type: Article

References (6)

1. W. E. Hoke, P. J. Lemonias, J. J. Mosca, P. S. Lyman, A. Torabi, P. F. Marsh, R. A. McTaggart, S. M. Lardizabal, and K. Hetzler, J. Vac. Sci. Technol. B 17, 1131 (1999).
2. W. E. Hoke, P. J. Lemonias, T. D, Kennedy, A. Torabi, E. K. Tong, R. J. Bourque, J. H. Jang, G. Cueva, D. C. Dumka, I. Adesida, K. L. Chang, and K. C. Hsieh, J. Vac. Sci. Technol. B 19, 1505 (2001).
3. K. L. Chang, J. H. Epple, G. W. Pickrell, H. C. Lin, K. Y. Cheng, and K. C. Hsieh, J. Appl. Phys. 88, 6922 (2000).
4. G. W. Pickrell, K. L. Chang, J. H. Epple, K. Y. Cheng, and K. C. Hsieh, J. Vac. Sci. Technol. B 18, 2611 (2000).
5. S. R. McAfee, W. T. Tsang, and D. V. Lang, J. Appl. Phys. 52, 6165 (1981).
6. J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974).