Reliability improvement of AlInAs/GaInAs high electron mobility transistors by fluorine incorporation control

Journal of the Electrochemical Society

Volumn 145, Issue 8, 1998, Pages 2951-2954

  Hayafuji, N ^a,b   Yamamoto, Y ^a   Ishida, T ^a   Sato, K ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b ELECTROCHEMICAL SOCIETY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; FLUORINE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL DIFFUSION IN SOLIDS;

ZERO GATE BIAS SATURATED DRAIN CURRENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032139110     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838742     Document Type: Article

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