Lateral current density fronts in asymmetric double-barrier resonant-tunneling structures

Journal of Applied Physics

Volumn 93, Issue 10 1, 2003, Pages 6347-6353

  Rodin, Pavel ^a,b   Schöll, Eckehard ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DIODES; NONLINEAR SYSTEMS; RESONANT TUNNELING; SEMICONDUCTOR QUANTUM WELLS; SWITCHES;

DOUBLE-BARRIER STRUCTURES;

CURRENT DENSITY;

EID: 0038282705     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1568529     Document Type: Article

References (27)

1. V. J. Goldmann, D. C. Tsui, and J. E. Cunningham, Phys. Rev. Lett. 58, 1256 (1987).
2. A. Martin, M. Lerch, P. Simmonds, and L. Eaves, Appl. Phys. Lett. 64, 1248 (1994).
3. A. Wacker and E. Schöll, J. Appl. Phys. 78, 7352 (1995).
4. B. Glavin, V. Kochelap, and V. Mitin, Phys. Rev. B 56, 13346 (1997).
5. D. Mel'nikov and A. Podlivaev, Semiconductors 32, 206 (1998).
6. M. N. Feiginov and V. A. Volkov, JETP Lett. 68, 633 (1998) [Pis'ma Zh. Eksp. Teor. Fiz. 68, 628 (1998)].
7. M. Meixner, P. Rodin, E. Schöll, and A. Wacker, Eur. Phys. J. B 13, 157 (2000).
8. V. Cheianov, P. Rodin, and E. Schöll, Phys. Rev. B 62, 9966 (2000).
9. E. Schöll, A. Amann, M. Rudolf, and J. Unkelbach, Physica B 314, 113 (2002).
10. ew derived in Ref. 7 also includes an additional logarithmic term which gives a contribution of about 5% for the chosen parameters. This term is skipped here for simplicity.
11. J. Inkoferer, G. Obermair, and F. Claro, Phys. Rev. B 64, 201404 (2001).
12. S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge University Press, Cambridge, U.K., 1995).
13. The spacer layer in the emitter is not taken into account here.
14. P. J. Price, in Handbook on Semiconductors, edited by P. T. Landsberg (Elsevier, Amsterdam 1992), Vol. 1.
15. P. Guèret, C. Rossel, E. Marclay, and H. Meier, J. Appl. Phys. 66, 278 (1989).
16. B. K. Ridley, Electrons and Phonons in Semiconductor Multilayers (Cambridge University Press, Cambridge, U.K., 1995), p. 23, Eq. (1.29).
17. V. Karpus, Semicond. Sci. Technol. 5, 691 (1990).
18. Note that at T=4 K the momentum and energy relaxation times in the quantum well are determined by interface roughness scattering and acoustic phonon scattering, respectively (see Refs. 16 and 17).
19. R) has also been reported in Ref. 4 for the coherent tunneling model.
20. E. Schöll, Nonlinear Spatio-Temporal Dynamics and Chaos in Semiconductors (Cambridge University Press, Cambridge, U.K., 2001).
21. L.-E. Wernersson, M. Suhara, N. Carlsson, K. Furuya, B. Gustafson, A. Litwin, L. Samuelson, and W. Seifert, Appl. Phys. Lett. 74, 311 (1999).
22. L.-E. Wernersson, M. Borgström, B. Gustafson, A. Gustafsson, L. Jarlskog, J.-O. Malm, A. Litwin, L. Samuelson, and W. Seifert, J. Cryst. Growth 221, 704 (2000).
23. I. Mitkov, K. Kladko, and J. E. Pearson, Phys. Rev. Lett. 81, 5453 (1998).
24. A. M. Nechaev and B. F. Sinkevich, Sov. Phys. Semicond. 18, 218 (1984) [Fiz. Tekh. Poluprovodn. (S.-Peterburg) 18, 350 (1984)].
25. A. Alekseev, S. Bose, P. Rodin, and E. Schöll, Phys. Rev. E 57, 2640 (1998).
26. S. M. Sze, Modern Semiconductor Device Physics (Wiley, New York, 1998).
27. M. Meixner, P. Rodin, and E. Schöll, Phys. Rev. E 58, 2796 (1998).