Stability of current filaments in a bistable semiconductor system with global coupling

Physical Review E - Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics

Volumn 57, Issue 3, 1998, Pages 2640-2649

  Alekseev, A ^a   Rodin, P ^b,c   Scholl E ^b  

^a UPPSALA UNIVERSITY   (Sweden)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CAPACITANCE; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; EIGENVALUES AND EIGENFUNCTIONS; ELECTRIC RESISTANCE; GEOMETRY; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

CURRENT FILAMENTS; NEUMANN BOUNDARY CONDITIONS; TWO DIMENSIONAL;

SEMICONDUCTOR MATERIALS;

EID: 0032023415     PISSN: 1063651X     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevE.57.2640     Document Type: Article

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