Controlling the amount of Si-OH bonds for the formation of high-quality low-temperature gate oxides for poly-Si TFTs

Materials Research Society Symposium - Proceedings

Volumn 508, Issue , 1998, Pages 167-173

  Yuda, Katsuhisa ^a   Tanabe, Hiroshi ^a   Sera, Kenji ^a   Okumura, Fujio ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; GATES (TRANSISTOR); LOW TEMPERATURE OPERATIONS; OXIDES; SEMICONDUCTING SILICON;

GATE OXIDES;

THIN FILM TRANSISTORS;

EID: 0032314579     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-508-167     Document Type: Conference Paper

References (6)