Unified MOSFET scaling theory using the variational method

International Journal of Electronics

Volumn 89, Issue 11, 2002, Pages 821-831

  He, Ping ^a   Chen, Wensong ^a   Tian, Lilin ^a   Li, Zhijian ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; GATES (TRANSISTOR); POISSON EQUATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; TWO DIMENSIONAL; VARIATIONAL TECHNIQUES;

ELECTRICAL EQUIVALENT OXIDE THICKNESS; MOSFET SCALING THEORY; SHORT CHANNEL EFFECT; SOFTWARE PACKAGE MEDICI;

MOSFET DEVICES;

EID: 0038127214     PISSN: 00207217     EISSN: None     Source Type: Journal    
DOI: 10.1080/0020721031000104478     Document Type: Article

References (12)

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