A new deduction of the threshold voltage for short-channel FDSOI MOSFET's using parabolic potential approach

Chinese Journal of Electronics

Volumn 7, Issue 2, 1998, Pages 152-157

  Chen, Wensong ^a   Tian, Lilin ^a   Yu, Z ^a,b,c,d   Li, Zhijian ^a  

^a TSINGHUA UNIVERSITY   (China)

^b STANFORD UNIVERSITY   (United States)

^c Stanford University   (United States)

^d IEEE

Author keywords

DIBL. (Drain induced barrier lowering); MOSFET; Short channel; SOI; Threshold voltage

Indexed keywords

BOUNDARY CONDITIONS; COMMUNICATION CHANNELS (INFORMATION THEORY); COMPUTER SIMULATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY;

DRAIN INDUCED BARRIER LOWERING (DIBL); PARABOLIC POTENTIAL APPROACH; POISSON EQUATION; SHORT CHANNELS; THRESHOLD VOLTAGE MODELS;

MOSFET DEVICES;

EID: 0032048034     PISSN: 10224653     EISSN: 20755597     Source Type: Journal    
DOI: None     Document Type: Article

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