Effects of nitrogen gas flow and film thickness on electric properties of TiN thin film deposited at room temperature

International Journal of Modern Physics B

Volumn 17, Issue 8-9 I, 2003, Pages 1177-1182

  Wu, Jingbo ^a   Murakami, Ri Ichi ^a   Kondo, Masaharu ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GLASS; NITROGEN; TITANIUM;

CONFERENCE PAPER; CRYSTAL STRUCTURE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTROMAGNETIC FIELD; FILM; GAS FLOW; MATERIAL COATING; MICROWAVE OVEN; ROOM TEMPERATURE; SURFACE PROPERTY; TEMPERATURE DEPENDENCE;

EID: 0038101524     PISSN: 02179792     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0217979203018703     Document Type: Conference Paper

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