Improved performance of GaAs radiation detectors with low temperature ohmic contacts

IEEE Transactions on Nuclear Science

Volumn 44, Issue 3 PART 1, 1997, Pages 943-949

  Nava, F ^a   Bertuccio, G ^b   Vanni, P ^a   Canali, C ^a   Cavallini, A ^c   Castaldini, A ^c   Polenta, L ^c  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038099713     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.603782     Document Type: Article

References (12)

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3. D.S. Me Gregor et al., "Present status of undoped LEC bulk GaAs as a radiation spectrometer", Nucl. Instr. Meth. A 343, pp. 527-538 (1994).
4. L. Berluti et al., "Gallium Arsenide detectors: a study of the active region and charge collection efficiency", Nucl. Instr. Meth. A 354, pp. 364-367 (1995).
5. A. Castaldini et al., "Influence of ohmic contacts on semi-insulating GaAs detector performance", Mat. Res. Soc. Symp. Proc., vol. 406, pp. 431-436, (1996).
6. D.S. Me Gregor et al., "Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors", J. Appl. Phys., 75, pp 7910-7915 (1994).
7. A. Castaldini et al., "Electric field and space charge region distribution in semi-insulating gallium arsenide Schottky detectors", submitted for publication to App. Phys. Lett.
8. Alenia S.p.A., Via Tiburtina km 12.400 I-00131 Roma, Italy, contact person Dr. A.Cetronio.
9. M. Alietti et al., "Performance of a new ohmic contact for GaAs particle detectors", Mucl. Instr. Meth. A 362, pp. 344-348 (1995)
10. G. Bertuccio et al., "Schottky junctions on semi-insulating LEC gallium arsenide for X- and γ-ray spectrometers operated near room temperature", Submitted for publication to IEEE Trans, on Nucl. Science in press April 1997.
11. A. Castaldini et al., "Bias dependence of the depletion layer width in semi-insulating GaAs by charge collection scanning microscopy", Scanning Microscopy, Vol.8, pp. 969-978 (1994).
12. K. Berwick et al., "Imaging of high field regions in SI GaAs under bias", Mater. Sci. Eng. B28, 485-494 (1994)