Performances of SI GaAs detectors fabricated with implanted ohmic contacts

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 2, 1996, Pages 1130-1136

  Nava, F ^a,b   Alietti, M ^a,c   Canali, C ^a,c   Cavallini, A ^d,e   Chiossi, C ^a,b   Del Papa, C ^f,g   Re, V ^h,i   Lanzieri, C ^j  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b Ist Astrofis Spaziale Fis Cosmica   (Italy)

^c INFN SEZIONE DI BOLOGNA   (Italy)

^d UNIVERSITY OF BOLOGNA   (Italy)

^e Unità di Ric INFM di Bologna   (Italy)

^f UNIVERSITY OF UDINE   (Italy)

^g SEZIONE DI TRIESTE   (Italy)

^h UNIVERSITY OF PAVIA   (Italy)

ⁱ INFN SEZIONE DI MILANO   (Italy)

^j ALENIA SPAZIO   (Italy)

more..

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DEEP LEVEL TRANSIENT SPECTROSCOPY; EFFICIENCY; ELECTRIC CHARGE; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; FABRICATION; IONIZATION; IRRADIATION; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE;

GALLIUM ARSENIDE SCHOTTKY BARRIER NUCLEAR DETECTORS; IMPLANTED OHMIC CONTACTS; LIQUID ENCAPSULATED CZOCHRALSKI; PHOTO INDUCED CURRENT TRANSIENT SPECTROSCOPY; SEMI INSULATING GALLIUM ARSENIDE PARTICLE DETECTORS; TRAPPING/DETRAPPING EFFECTS;

PARTICLE DETECTORS;

EID: 0030172059     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.506650     Document Type: Article

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