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Volumn 22, Issue 2, 1979, Pages 181-192

Theory of switching in p-n-insulator (tunnel)-metal devices. Part I: Punchthrough mode

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MIS;

EID: 0018431212     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(79)90111-4     Document Type: Article
Times cited : (65)

References (30)
  • 8
    • 84918021740 scopus 로고    scopus 로고
    • J.G. Simmons and K.D. Chik, Solid State Electr. (in press)
  • 9
    • 84918244849 scopus 로고
    • The Surface-Barrier Transistor: Part I-Principles of the Surface-Barrier Transistor
    • (1953) Proceedings of the IRE , vol.41 , pp. 1702
    • Bradley1
  • 17
    • 84918021739 scopus 로고    scopus 로고
    • S.E-D. Habib and J.G. Simmons. To be published


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.